SiGe HBT Transistor Die from United States
Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor dice for high-frequency 5G base station applications, unmounted with under 1W dissipation. These offer superior high-frequency performance for advanced communications.
Duty Rate — United States → Canada
0%
Import Tips
• SiGe HBTs are classified by dissipation, not frequency, under this subheading
• Provide technical data showing under 1W dissipation
• As bare dice, they are not yet mounted or assembled into modules