GaN Small Signal HEMT Transistor from Germany
The GaN Small Signal HEMT is a Gallium Nitride High Electron Mobility Transistor designed for microwave frequencies in 5G base stations and radar systems, with a dissipation rate under 1 W. As an advanced compound semiconductor device, it qualifies as a low-power transistor under tariff item 8541.21.00. This product offers superior power density and efficiency for high-frequency applications.
Duty Rate — Germany → Canada
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Import Tips
• Include the datasheet showing the dissipation rate and frequency capabilities to support the 8541.21.00 classification
• Since GaN transistors may be subject to export controls in some countries, ensure all export permits are in order
• For 5G applications, verify if the product meets Canadian standards for radio equipment