Undoped GaAs Wafer with Epitaxial Doping Layer from Germany
>- A semi-insulating undoped GaAs substrate wafer with a thin epitaxial doped layer grown on the surface for MMIC production. The doping is integral for electronic functionality in monolithic microwave ICs. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
Duty Rate — Germany → Canada
0%
Import Tips
• >- Ensure the epitaxial doped layer is clearly described, as the wafer itself is undoped but the product is doped overall
• Provide evidence that the doping is integral to the electronic function
• If the wafer is for MMIC production, state the intended use to avoid misclassification