Epi-Ready Doped GaAs Wafer 100mm from Mexico
>- A 100mm epi-ready GaAs wafer doped with controlled carrier concentration for immediate MBE growth. Used in gallium nitride overgrowth for power electronics. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
Duty Rate — Mexico → Canada
0%
Import Tips
• >- Document the carrier concentration and epi-ready status to support the doping claim
• If the wafer is used for gallium nitride overgrowth, ensure the end-use is clearly stated
• Keep the packing list separate from the invoice to facilitate CBSA inspection