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3818.00.00/8-inch 4H N-Epi Ready Doped SiC Wafer/Germany

8-inch 4H N-Epi Ready Doped SiC Wafer from Germany

8-inch 4H-SiC wafers nitrogen-doped and epi-ready for immediate epitaxial growth in SiC power device production. These wafers are doped for electronics applications and are classified under tariff item 3818.00.00, supporting manufacturing of 1200V-class devices.

Duty Rate — Germany → Canada

0%
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Import Tips

• Clearly state that the wafers are 'epi-ready' and nitrogen-doped on customs documentation

• Provide a letter of explanation if the wafers are for high-voltage power devices, as this supports classification

• Verify whether the wafers require any special permits under Canadian environmental regulations

8-inch 4H N-Epi Ready Doped SiC Wafer from Germany — Import Duty Rate | Tariff item 3818.00.00