6-Inch P-Type Doped Gallium Arsenide Wafer from United States
>- A high-purity 6-inch GaAs wafer doped p-type with zinc or beryllium for solar cell production and optoelectronics. Features low defect density for high-efficiency photovoltaic applications in space technology. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
Duty Rate — United States → Canada
0%
Import Tips
• >- Provide the dopant type (zinc or beryllium) and concentration in the technical datasheet to avoid delays
• If the wafers are for solar cells, confirm whether they are classified as parts of photovoltaic devices elsewhere
• Keep shipping documents showing the wafer form (disc) for customs verification