3818.00.00/4-Inch N-Type Doped GaAs Wafer/Japan

4-Inch N-Type Doped GaAs Wafer from Japan

>- A 4-inch GaAs wafer doped n-type with silicon impurities, designed for epitaxial growth in high-electron-mobility transistors (HEMTs). Used in satellite communications and 5G base stations due to superior electron mobility. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.

Duty Rate — Japan → Canada

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Import Tips

• >- Confirm the doping type (n-type) and impurity (silicon) on the commercial invoice to support classification

• If the wafers are part of a kit with other components, review Section VI Note 3 for set classification

• Ensure the wafer dimensions are accurately declared for statistical purposes