4-Inch N-Type Doped GaAs Wafer from China
>- A 4-inch GaAs wafer doped n-type with silicon impurities, designed for epitaxial growth in high-electron-mobility transistors (HEMTs). Used in satellite communications and 5G base stations due to superior electron mobility. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
Duty Rate — China → Canada
0%
Import Tips
• >- Confirm the doping type (n-type) and impurity (silicon) on the commercial invoice to support classification
• If the wafers are part of a kit with other components, review Section VI Note 3 for set classification
• Ensure the wafer dimensions are accurately declared for statistical purposes