3-Inch High-Mobility Electron GaAs Wafer from United States
>- A 3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with an epi-ready surface finish, it is a key substrate for high-frequency electronics. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
Duty Rate — United States → Canada
0%
Import Tips
• >- Verify the epi-ready surface finish is documented, as CBSA may require proof of doping for classification
• Consider whether the wafer is for research or production, as end-use may affect applicable programs
• Retain records of the dopant concentration for customs audits