2-Inch Doped Gallium Arsenide Wafer from Japan
>- A 2-inch diameter gallium arsenide (GaAs) wafer doped with silicon or tellurium to enhance electrical conductivity for semiconductor applications. Polished to an atomic-level finish, it is used as a substrate for epitaxial growth in electronic devices. This product falls under tariff item 3818.00.00 as a chemical element doped for use in electronics, in the form of a disc.
Duty Rate — Japan → Canada
0%
Import Tips
• >- Ensure the wafer is doped and presented in disc form to qualify for 3818.00.00
• Have the supplier provide a certificate of origin if claiming a preferential tariff under a free trade agreement
• Declare the exact diameter and dopant type to avoid CBSA classification disputes