IDT (Renesas) 71V416S15ETG SRAM Chip from China
Renesas 71V416S15ETG is a 4Mb synchronous burst SRAM with 15ns access time, pipelined architecture for high-performance caching. Classified as static read-write RAM under HTS 8542.32.0041 due to its non-refresh volatile memory design. Used in networking equipment and high-speed processors.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Include JEDEC registration and pinout diagrams to verify SRAM functionality and avoid microprocessor misclassification
• Watch for anti-dumping duties on certain Asian semiconductor imports; check ITC records
• Use HTSUS statistical suffix .0041 specifically for SRAM to ensure accurate duty application