Toshiba TC59LM816 1Gb Mobile DRAM from China
Low-power 1Gb DDR2 SDRAM IC for portable devices, fitting HTS 8542.32.00.32 for DRAM over 512 megabits to 1 gigabit. Provides volatile memory for tablets and wearables. Meets dynamic read-write random access specifications.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Certify power consumption specs if claiming mobile/low-power variants for any duty preferences
• Bundle with Bills of Materials showing IC purity (>99% silicon content) for valuation
• Watch for anti-dumping duties on certain Asian DRAM origins; check Commerce scope rulings