Hynix H5TQ4G43GFR DRAM Chip from China
SK Hynix 512Mx8 DDR4 DRAM integrated circuit for mobile and embedded systems, with capacity fitting the over 512 megabits to 1 gigabit threshold. This HTS code covers dynamic random access memories in this exact density range used for volatile data storage. Ideal for smartphones and automotive electronics.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Label shipments with precise part numbers and speed grades to match 8542.32.00.32; mismatches lead to delays
• Comply with US semiconductor import reporting under Commerce Department rules for origin tracking
• Avoid common pitfall of declaring as 'computer parts' – specify as individual ICs to stay in Chapter 85 heading 8542