Schottky Barrier Diode Wafer from China
150mm silicon wafer with unmounted Schottky diode chips for high-frequency power rectification in switch-mode power supplies, 600V/10A rating. HTS 8541.59.00.40 covers these unseparated semiconductor wafers. Low forward voltage drop enables efficient DC-DC conversion.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide diode capacitance vs voltage curves and thermal resistance data; confirm planar vs trench Schottky structure; watch for reclassification if wafer-level packaged