8541.59.00.40/Power SiC Diode Wafer/Germany

Power SiC Diode Wafer from Germany

150mm SiC wafer with merged p-n Schottky diode chips rated 1700V/50A for photovoltaic inverters and traction systems. HTS 8541.59.00.40 for unmounted power semiconductor wafers. Ultra-low reverse recovery enables high switching frequencies.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Certify polytype (4H-SiC) and micropipe density; document surge current capability; comply with UL standards for power semiconductors

Power SiC Diode Wafer from Germany — Import Duty Rate | HTS 8541.59.00.40