Power SiC Diode Wafer from China
150mm SiC wafer with merged p-n Schottky diode chips rated 1700V/50A for photovoltaic inverters and traction systems. HTS 8541.59.00.40 for unmounted power semiconductor wafers. Ultra-low reverse recovery enables high switching frequencies.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Certify polytype (4H-SiC) and micropipe density; document surge current capability; comply with UL standards for power semiconductors