Gallium Nitride RF Transistor Die from Mexico
Unmounted GaN high-electron-mobility transistor (HEMT) dice on 4-inch wafers for 5G base stations and radar systems, featuring 50V breakdown voltage. Falls under HTS 8541.59.00.40 as unmounted semiconductor dice for RF power amplification devices. Imported for die bonding onto RF modules.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Include HEMT layer structure specifications and epi-wafer certification; ensure dice are not wafer-thinned or bumped to maintain unmounted classification; check for ITAR restrictions on RF power devices