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8541.59.00.40/Gallium Nitride RF Transistor Die/Japan

Gallium Nitride RF Transistor Die from Japan

Unmounted GaN high-electron-mobility transistor (HEMT) dice on 4-inch wafers for 5G base stations and radar systems, featuring 50V breakdown voltage. Falls under HTS 8541.59.00.40 as unmounted semiconductor dice for RF power amplification devices. Imported for die bonding onto RF modules.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include HEMT layer structure specifications and epi-wafer certification; ensure dice are not wafer-thinned or bumped to maintain unmounted classification; check for ITAR restrictions on RF power devices

Gallium Nitride RF Transistor Die from Japan — Import Duty Rate | HTS 8541.59.00.40