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8541.49.95.00/PIN Photodiode/Mexico

PIN Photodiode from Mexico

P-type Intrinsic N-type silicon photodiode for medium speed data links. HTS 8541.49.95.00 other photosensitive semiconductor device. Intrinsic layer provides high quantum efficiency.

Duty Rate — Mexico → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))
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Import Tips

• Intrinsic layer thickness specs confirm PIN structure vs PN junction

• SFP/QSFP transceiver qualification common for data center imports

• TO-can hermetic packages require special customs handling

PIN Photodiode from Mexico — Import Duty Rate | HTS 8541.49.95.00