PIN Photodiode from China
P-type Intrinsic N-type silicon photodiode for medium speed data links. HTS 8541.49.95.00 other photosensitive semiconductor device. Intrinsic layer provides high quantum efficiency.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Intrinsic layer thickness specs confirm PIN structure vs PN junction
• SFP/QSFP transceiver qualification common for data center imports
• TO-can hermetic packages require special customs handling