APD Avalanche Photodiode from Mexico
High-gain avalanche photodiode for low-light detection in LIDAR systems. HTS 8541.49.95.00 covers as other photosensitive semiconductor device. Internal gain mechanism distinguishes from standard photodiodes.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Breakdown voltage specifications critical for APD verification vs standard diode
• ITAR/EAR classification review required for LIDAR defense applications
• Hermetic sealing certification prevents moisture ingress claims