APD Avalanche Photodiode from China
High-gain avalanche photodiode for low-light detection in LIDAR systems. HTS 8541.49.95.00 covers as other photosensitive semiconductor device. Internal gain mechanism distinguishes from standard photodiodes.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Breakdown voltage specifications critical for APD verification vs standard diode
• ITAR/EAR classification review required for LIDAR defense applications
• Hermetic sealing certification prevents moisture ingress claims