Silicon Phototransistor T-1 3/4 Package from China
A silicon NPN phototransistor in a T-1 3/4 (5mm) plastic package designed to detect visible and near-IR light, converting photons into electrical current via the semiconductor base. It falls under HTS 8541.49.70 as a photosensitive semiconductor transistor used in light sensing applications like optical switches and encoders.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Verify photosensitive functionality with test data; non-photosensitive transistors classify under 8541.21 or 8541.29
• Include detailed datasheets showing spectral response curves to confirm classification as photosensitive device