IR Phototransistor 940nm Peak Sensitivity from China
Infrared phototransistor optimized for 940nm wavelength detection, commonly used in remote control receivers and proximity sensors. Classified under HTS 8541.49.70 as a photosensitive semiconductor transistor that generates collector current proportional to incident IR light.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide spectral response documentation proving IR sensitivity to avoid misclassification as visible light phototransistor
• Check for radiation-hardened versions which may require 8525.82 certification if used in high-radiation environments
• Ensure RoHS compliance certification; many electronics importers face delays without material content declarations