High Temperature Phototransistor 200°C from Japan
Wide temperature range phototransistor (-40°C to +200°C) using specialized silicon for downhole oilfield sensors and engine compartment monitoring. HTS 8541.49.70 classification for extreme environment photosensitive transistors.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Include accelerated life test data proving 200°C operation without degradation
• Material analysis required for high-temp silicon vs standard epitaxial process
• Hazardous location (ATEX/IECEx) certification if for oil/gas applications