Miniature Phototransistor TEMD5010X01 from Japan
0201-size (0.6x0.3mm) IR phototransistor for mobile device proximity sensing and wearables. Ultra-low profile for under-display applications. Compact photosensitive transistor under 8541.49.70.80.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• High-res photos and die size measurements prove discrete transistor vs. integrated sensor
• Include reflow soldering profiles confirming component-level import status
• Prevent reclassification as phone parts (8517.13) with end-use statements