SiC UV Phototransistor Die from China
Silicon Carbide unmounted die as photosensitive transistor for ultraviolet light sensing. Fits 8541.49.70.40 criteria for unmounted chips in harsh environment detectors.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Certify SiC purity levels to distinguish from silicon and avoid reclassification
• Include thermal cycling test data for high-temp applications
• Comply with RoHS exemptions for SiC in power electronics