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InGaAs Photodiode Wafer from Mexico

Indium Gallium Arsenide wafer of unmounted photosensitive transistor dice for near-infrared detection. Under 8541.49.70.40 for its raw wafer form used in fiber optic and spectroscopy.

Duty Rate — Mexico → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))

Import Tips

Declare hazardous material status if containing Arsenide compounds per DOT regulations

Obtain BIS licenses for telecom-grade InGaAs due to export control lists

Use nitrogen-purged shipping to prevent oxidation of wafer surfaces