InGaAs Photodiode Wafer from Japan
Indium Gallium Arsenide wafer of unmounted photosensitive transistor dice for near-infrared detection. Under 8541.49.70.40 for its raw wafer form used in fiber optic and spectroscopy.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Declare hazardous material status if containing Arsenide compounds per DOT regulations
• Obtain BIS licenses for telecom-grade InGaAs due to export control lists
• Use nitrogen-purged shipping to prevent oxidation of wafer surfaces