InGaAs Photodiode Wafer from Germany
Indium Gallium Arsenide wafer of unmounted photosensitive transistor dice for near-infrared detection. Under 8541.49.70.40 for its raw wafer form used in fiber optic and spectroscopy.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Declare hazardous material status if containing Arsenide compounds per DOT regulations
• Obtain BIS licenses for telecom-grade InGaAs due to export control lists
• Use nitrogen-purged shipping to prevent oxidation of wafer surfaces