InGaAs Photodiode Wafer from China
Indium Gallium Arsenide wafer of unmounted photosensitive transistor dice for near-infrared detection. Under 8541.49.70.40 for its raw wafer form used in fiber optic and spectroscopy.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Declare hazardous material status if containing Arsenide compounds per DOT regulations
• Obtain BIS licenses for telecom-grade InGaAs due to export control lists
• Use nitrogen-purged shipping to prevent oxidation of wafer surfaces