InGaAs Photodiode Detector from China
Indium Gallium Arsenide photodiode optimized for near-infrared light detection in fiber optic and spectroscopy applications. Falls under HTS 8541.49.10 as other photosensitive semiconductor diodes excluding photovoltaics and LEDs. Provides high-speed response for telecom and scientific uses.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide material composition certificates proving InGaAs construction for proper photosensitive diode classification
• Ensure TO-can packaging doesn't trigger parts classification under 8541.90
• Avoid describing as 'solar cell' to prevent reclassification to photovoltaic subheadings