InGaAs Infrared Photodiode from Germany
Indium Gallium Arsenide photodiode optimized for near-infrared light detection (900-1700nm) used in fiber optic communication and spectroscopy. HTS 8541.49.1050 covers this compound semiconductor photosensitive diode excluding PV cells and LEDs. Features hermetic TO-can packaging for industrial reliability.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide detailed material composition (InGaAs) and wavelength specs to distinguish from silicon photodiodes
• Include hermetic sealing certification if applicable for defense/space applications
• Watch for reclassification as telecom equipment parts (8517.62) when paired with transceivers