InGaAs Infrared Photodiode from China
Indium Gallium Arsenide photodiode optimized for near-infrared light detection (900-1700nm) used in fiber optic communication and spectroscopy. HTS 8541.49.1050 covers this compound semiconductor photosensitive diode excluding PV cells and LEDs. Features hermetic TO-can packaging for industrial reliability.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Provide detailed material composition (InGaAs) and wavelength specs to distinguish from silicon photodiodes
• Include hermetic sealing certification if applicable for defense/space applications
• Watch for reclassification as telecom equipment parts (8517.62) when paired with transceivers