APD Avalanche Photodiode from Japan
High-gain avalanche photodiode providing internal current multiplication for low-light detection in LIDAR and long-range optical communication. HTS 8541.49.1050 applies to this photosensitive semiconductor diode with gain >50. Features low noise for photon counting applications.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Document internal gain factor (>10) and multiplication mechanism to distinguish from PIN diodes
• Include dark current and excess noise specs for technical validation
• Prevent reclassification as laser detectors (9013) by excluding optical mounting hardware