MRF6V2300NR3 LDMOS RF Power FET from China
MRF6V2300NR3 is an LDMOS FET for cellular base stations operating 2300 MHz band with high power output. HTS 8541.29.00.65 classification for high-frequency transistors. Critical component in 4G/5G infrastructure.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• NIJII flange package; high value requires insurance and accurate valuation
• Critical infrastructure component; supply chain documentation increasingly scrutinized
• Section 232/301 tariffs likely apply based on origin