MRF6V2300NR3 LDMOS RF Power FET from China

MRF6V2300NR3 is an LDMOS FET for cellular base stations operating 2300 MHz band with high power output. HTS 8541.29.00.65 classification for high-frequency transistors. Critical component in 4G/5G infrastructure.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

Import Tips

NIJII flange package; high value requires insurance and accurate valuation

Critical infrastructure component; supply chain documentation increasingly scrutinized

Section 232/301 tariffs likely apply based on origin

MRF6V2300NR3 LDMOS RF Power FET from China — Import Duty Rate | HTS 8541.29.00.65