SiGe HBT BFP640 Transistor from China
BFP640 is a silicon germanium heterojunction bipolar transistor for low-noise amplifiers up to 10 GHz in wireless base stations. HTS 8541.29.00.65 classification for high-frequency transistors 30 MHz-30 GHz range. Excellent for 5G infrastructure applications.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• SiGe material composition requires specific identification in entry documentation
• High-frequency claims need supporting S-parameter data from manufacturer
• Watch Section 301 tariffs if originating from covered countries