BFG520W NPN Silicon Microwave Transistor
BFG520W is a double-poly NPN silicon RF transistor for microwave applications up to 5 GHz, used in base station amplifiers and wireless infrastructure. Meets HTS 8541.29.00.65 for transistors operating 30 MHz to 30,000 MHz. High gain and linearity for cellular communications.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If hybrid microwave integrated circuit (MMIC)
MMICs containing transistors on single chip classify as integrated circuits under 8542.32.
If mounted in complete base station amplifier
Assembled radio transmission apparatus classified by function under heading 8517.
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Import Tips & Compliance
• Submit detailed frequency response curves from datasheet to Customs for verification
• Separate discrete transistors from MMICs which classify differently under 8542.31
• Maintain chain-of-custody documentation for high-value telecom components
Related Products under HTS 8541.29.00.65
NE68133G NPN Silicon RF Transistor
NE68133G is a high-frequency NPN transistor for wireless LAN and Bluetooth applications operating up to 6 GHz. Classified under HTS 8541.29.00.65 for 30 MHz+ transistors. Used in WiFi router front-end modules.
2SC5785 NPN Silicon RF Transistor
The 2SC5785 is an NPN epitaxial silicon transistor designed for high-frequency RF amplifier applications in VHF/UHF bands, with an operating frequency up to 520 MHz. It falls under HTS 8541.29.00.65 as a non-photosensitive transistor with an operating frequency between 30 MHz and 30,000 MHz. Commonly used in wireless communication devices like radio transceivers.
MRF455 NPN Power RF Transistor
The MRF455 is a high-power NPN silicon RF transistor for FM broadcast transmitters operating at frequencies from 30 MHz to 550 MHz. Classified under HTS 8541.29.00.65 due to its RF operating range between 30 MHz and 30 GHz. Used in professional broadcast and amateur radio amplifiers.
2N3866 NPN RF Power Transistor
The 2N3866 is a silicon NPN transistor for RF power amplification in 30-500 MHz range, commonly used in military and commercial VHF equipment. Falls under HTS 8541.29.00.65 due to specified operating frequency 30 MHz+. Reliable for high-reliability applications.
BLF278 MOSFET RF Power Transistor
BLF278 is a high-power N-channel enhancement-mode MOSFET for RF broadcast service from 1.8-30 MHz and up to 108 MHz operation. Classified HTS 8541.29.00.65 for transistors exceeding 30 MHz operating frequency. Used in medium-wave and short-wave transmitters.
SiGe HBT BFP640 Transistor
BFP640 is a silicon germanium heterojunction bipolar transistor for low-noise amplifiers up to 10 GHz in wireless base stations. HTS 8541.29.00.65 classification for high-frequency transistors 30 MHz-30 GHz range. Excellent for 5G infrastructure applications.