Float Zone Crystal Grower from China
Apparatus employing the float zone method to produce monocrystalline semiconductor boules without crucibles, ideal for high-purity silicon and gallium arsenide. Classified in HTS 8486.40.00 per note 11(C) for wafer precursor manufacturing. Critical for oxygen-free crystal production in advanced semiconductors.
Duty Rate — China → United States
25%
Rate breakdown
9903.88.0225%Except as provided in headings 9903.88.12, 9903.88.17, 9903.88.20, 9903.88.54, 9903.88.59, 9903.88.61, 9903.88.63, 9903.88.66, 9903.88.67, 9903.88.68, 9903.88.69, or 9903.88.70, articles the product of China, as provided for in U.S. note 20(c) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(d)
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Include process diagrams demonstrating float zone RF heating for semiconductor materials in entry documentation
• Confirm boule diameter specs match industry standards (150-450mm) to validate semiconductor-specific classification
• Watch for misclassification as vacuum furnaces; emphasize semiconductor boule end-use