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8481.80.90.50/Epitaxial Reactor Precursor Gas Valve/Japan

Epitaxial Reactor Precursor Gas Valve from Japan

UHP precursor gas delivery valve for MOCVD epitaxial reactors growing compound semiconductor layers on prepared wafers. HTS 8481.80.9050 for other semiconductor processing appliances. Heated design prevents condensation.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
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Import Tips

• Specify precursor chemicals (TMG, TMA) and temperature ratings

• Provide reactor chamber pressure specs confirming process use

• Certify for pyrophoric gas service to support classification

Epitaxial Reactor Precursor Gas Valve from Japan — Import Duty Rate | HTS 8481.80.90.50