Epitaxial Reactor Precursor Gas Valve from Germany
UHP precursor gas delivery valve for MOCVD epitaxial reactors growing compound semiconductor layers on prepared wafers. HTS 8481.80.9050 for other semiconductor processing appliances. Heated design prevents condensation.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Section 301 (forced labor) — European Union member state (col1 rate < 10 percent): MFN < 10% → total duty capped at 10%
Import Tips
• Specify precursor chemicals (TMG, TMA) and temperature ratings
• Provide reactor chamber pressure specs confirming process use
• Certify for pyrophoric gas service to support classification