Epitaxial Reactor Precursor Gas Valve from China
UHP precursor gas delivery valve for MOCVD epitaxial reactors growing compound semiconductor layers on prepared wafers. HTS 8481.80.9050 for other semiconductor processing appliances. Heated design prevents condensation.
Duty Rate — China → United States
39.5%
Rate breakdown
9903.05.3112.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of China, as provided for in U.S. note 52 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Import Tips
• Specify precursor chemicals (TMG, TMA) and temperature ratings
• Provide reactor chamber pressure specs confirming process use
• Certify for pyrophoric gas service to support classification