Epitaxial Reactor Precursor Gas Valve from Canada
UHP precursor gas delivery valve for MOCVD epitaxial reactors growing compound semiconductor layers on prepared wafers. HTS 8481.80.9050 for other semiconductor processing appliances. Heated design prevents condensation.
Duty Rate — Canada → United States
12%
Rate breakdown
9903.05.2910%Section 301 (forced labor) — additional 10% ad valorem on products of Canada
Import Tips
• Specify precursor chemicals (TMG, TMA) and temperature ratings
• Provide reactor chamber pressure specs confirming process use
• Certify for pyrophoric gas service to support classification