8479.82.00.40/Float Zone Crystal Grower/Japan

Float Zone Crystal Grower from Japan

Machine employing float zone method with mixing and stirring mechanisms to purify and grow semiconductor boules by melting a narrow zone of polycrystalline rod via RF heating while translating. Classified under HTS 8479.82.0040 for its kneading/stirring role in zone refinement for ultra-pure silicon wafers. Essential for producing defect-free crystals used in high-performance chips.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Provide float zone process diagrams showing stirring mechanism to distinguish from simple melting equipment

• Ensure RF coil specifications meet semiconductor material purity standards to prevent Chapter 85 reclassification