Float Zone Crystal Grower from Japan
Equipment employing the float zone method to purify and grow monocrystalline semiconductor boules without a crucible, ideal for high-purity silicon and gallium arsenide. Used in initial stages of semiconductor material processing before wafer slicing. Falls under HTS 8479.79.00.00 as specialized machinery not elsewhere specified.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Include process flow diagrams showing boule growth to justify HTS; ensure FCC compliance for RF components
• Avoid bulk classification with general furnaces