Float Zone Crystal Grower from Japan
Apparatus employing the float zone method to produce ultra-pure monocrystalline semiconductor ingots from polycrystalline rods. Classified in HTS 8473.40.86.00 as a part/accessory for heading 8472 semiconductor manufacturing machines. Critical for high-resistivity silicon used in power devices.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Provide manufacturer's declaration confirming exclusive use in semiconductor crystal growth processes
• Document compatibility with heading 8472 machines to prevent reclassification
• Watch for valuation issues with complex RF heating systems included in the unit