Float Zone Crystal Grower from Japan
Apparatus employing the float zone method to produce ultra-pure monocrystalline semiconductor ingots from polycrystalline rods. Classified in HTS 8473.40.86.00 as a part/accessory for heading 8472 semiconductor manufacturing machines. Critical for high-resistivity silicon used in power devices.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Provide manufacturer's declaration confirming exclusive use in semiconductor crystal growth processes
• Document compatibility with heading 8472 machines to prevent reclassification
• Watch for valuation issues with complex RF heating systems included in the unit