Float Zone Crystal Grower from China
Apparatus employing the float zone method to produce ultra-pure monocrystalline semiconductor ingots from polycrystalline rods. Classified in HTS 8473.40.86.00 as a part/accessory for heading 8472 semiconductor manufacturing machines. Critical for high-resistivity silicon used in power devices.
Duty Rate — China → United States
35%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Provide manufacturer's declaration confirming exclusive use in semiconductor crystal growth processes
• Document compatibility with heading 8472 machines to prevent reclassification
• Watch for valuation issues with complex RF heating systems included in the unit