8454.90.00.80/Float Zone Crystal Grower Crucible/Japan

Float Zone Crystal Grower Crucible from Japan

High-purity graphite crucible used in float zone crystal growers to process semiconductor-grade silicon into monocrystalline boules. Classified under HTS 8454.90.0080 as a part of metallurgical casting machines for ingot production. Critical for maintaining zone purity during RF-heated melting.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Document RF induction compatibility and semiconductor purity standards; label as 'semiconductor ingot mold part' clearly

• Watch for undervaluation penalties on high-spec graphite