New Float Zone Crystal Furnace from Japan
A float zone furnace employing the float zone method to produce high-purity monocrystalline semiconductor boules without crucibles, ideal for silicon and gallium arsenide. Falls under HTS 8439.10.0010 as new machinery for fibrous cellulosic pulp production per statistical notes for semiconductor crystal growth. It melts a narrow zone via RF heating while the boule is pulled upward.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Include process flow diagrams showing semiconductor end-use to confirm Chapter 84 classification
• Label as 'new' with original packaging intact
• Pitfall: confusing with laboratory furnaces under 8514 if not production-scale