New Float Zone Crystal Furnace from China
A float zone furnace employing the float zone method to produce high-purity monocrystalline semiconductor boules without crucibles, ideal for silicon and gallium arsenide. Falls under HTS 8439.10.0010 as new machinery for fibrous cellulosic pulp production per statistical notes for semiconductor crystal growth. It melts a narrow zone via RF heating while the boule is pulled upward.
Duty Rate — China → United States
37.5%
Rate breakdown
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
9903.05.3112.5%Section 301 (forced labor) — additional 12.5% ad valorem on products of China
Import Tips
• Include process flow diagrams showing semiconductor end-use to confirm Chapter 84 classification
• Label as 'new' with original packaging intact
• Pitfall: confusing with laboratory furnaces under 8514 if not production-scale